Ag/Ti/GeS/Ag bidirectional conductive-bridge selector with low turn-off latency, high endurance, and enhanced switching uniformity

• المؤلفون الرئيسيون: Ali, Asif, Abbas, Haider, Li, Jiayi, Jung, Jongwan, Ang, Diing Shenp
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2025
• الموضوعات: Engineering; Bidirectional threshold switching; Chalcogenide switching material
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/182203
• المؤسسة: Nanyang Technological University

To fulfill the demands of three-dimensional (3D) cross-point array architectures in embedded memories, selectors with low voltage and low off current with high selectivity are imperative. Selector devices with reliable pulsed switching performance at a logic-compatible voltage are crucial for achiev...