GeS conducting-bridge resistive memory device with IGZO buffer layer for highly uniform and repeatable switching

بواسطة Ali, Asif, Abbas, Haider, Li, Jiayi, Ang, Diing Shenp
منشور في 2023

Emerging memristive artificial neuron and synapse devices for the neuromorphic electronics era

بواسطة Li, Jiayi, Abbas, Haider, Ang, Diing Shenp, Ali, Asif, Ju, Xin
منشور في 2023

Ag/Ti/GeS/Ag bidirectional conductive-bridge selector with low turn-off latency, high endurance, and enhanced switching uniformity

بواسطة Ali, Asif, Abbas, Haider, Li, Jiayi, Jung, Jongwan, Ang, Diing Shenp
منشور في 2025

Forming-free, self-compliance WTe₂-based conductive bridge RAM with highly uniform multilevel switching for high-density memory

بواسطة Abbas, Haider, Ali, Asif, Li, Jiayi, Tun, Thaw Tint Te, Ang, Diing Shenp
منشور في 2023