Unidirectional threshold switching induced by Cu migration with high selectivity and ultralow OFF current under gradual electroforming treatment

• المؤلفون الرئيسيون: Dananjaya, Putu Andhita, Loy, Desmond Jia Jun, Chow, Samuel Chen Wai, Lew, Wen Siang
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Science::Physics; Threshold Switching; Diffusive Memristor
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/140103

A gradual electroforming process was implemented on the pristine Pt/HfOx/Cu/Pt structure to realize volatile threshold switching characteristics of a diffusive memristor. The reported devices exhibit stable unidirectional threshold switching properties with high selectivity of >107 and ultralow O...