Recent advances in organic‐based materials for resistive memory applications

• Main Authors: Li, Yang, Qian, Qingyun, Zhu, Xiaolin, Li, Yujia, Zhang, Mayue, Li, Jingni, Ma, Chunlan, Li, Hua, Lu, Jianmei, Zhang, Qichun
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Materials; Data Storage; Memristors
• Online Access: https://hdl.handle.net/10356/146085
• Institution: Nanyang Technological University

With the rapid development of data‐driven human interaction, advanced data‐storage technologies with lower power consumption, larger storage capacity, faster switching speed, and higher integration density have become the goals of future memory electronics. Nevertheless, the physical limitations of...