Recent advances in organic‐based materials for resistive memory applications

• Main Authors: Li, Yang, Qian, Qingyun, Zhu, Xiaolin, Li, Yujia, Zhang, Mayue, Li, Jingni, Ma, Chunlan, Li, Hua, Lu, Jianmei, Zhang, Qichun
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Materials; Data Storage; Memristors
• Online Access: https://hdl.handle.net/10356/146085
• Institution: Nanyang Technological University

With the rapid development of data‐driven human interaction, advanced data‐storage technologies with lower power consumption, larger storage capacity, faster switching speed, and higher integration density have become the goals of future memory electronics. Nevertheless, the physical limitations of conventional Si‐based binary storage systems lag far behind the ultrahigh‐density requirements of post‐Moore information storage. In this regard, the pursuit of alternatives and/or supplements to the existing storage technology has come to the forefront. Recently, organic‐based resistive memory materials have emerged as promising candidates for next‐generation information storage applications, which provide new possibilities of realizing high‐performance organic electronics. Herein, the memory device structure, switching types, mechanisms, and recent advances in organic resistive memory materials are reviewed. In particular, their potential of fulfilling multilevel storage is summarized. Besides, the present challenges and future prospects confronted by organic resistive memory materials and devices are discussed.