Coexistence of write once read many memory and memristor in blend of Poly(3,4-ethylenedioxythiophene) : polystyrene sulfonate and polyvinyl alcohol

Coexistence of write once read many memory and memristor in blend of Poly(3,4-ethylenedioxythiophene) : polystyrene sulfonate and polyvinyl alcohol

In this work, the coexistence of Write Once Read Many Memory (WORM) and memristor can be achieved in a single device of Poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT: PSS) and Polyvinyl Alcohol (PVA) blend organic memory system. In memristor mode, the bistable resistance states of t...

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Bibliographic Details
Main Authors: Nguyen, Viet Cuong, Lee, Pooi See
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2018
Subjects:
Memory Device
Memristor
DRNTU::Engineering::Materials
Online Access:https://hdl.handle.net/10356/102462
http://hdl.handle.net/10220/46520
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/102462
http://hdl.handle.net/10220/46520

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