Coexistence of write once read many memory and memristor in blend of Poly(3,4-ethylenedioxythiophene) : polystyrene sulfonate and polyvinyl alcohol

• Main Authors: Nguyen, Viet Cuong, Lee, Pooi See
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Memory Device; Memristor; DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/102462; http://hdl.handle.net/10220/46520
• Institution: Nanyang Technological University

In this work, the coexistence of Write Once Read Many Memory (WORM) and memristor can be achieved in a single device of Poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT: PSS) and Polyvinyl Alcohol (PVA) blend organic memory system. In memristor mode, the bistable resistance states of t...