Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor

Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor

Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femto...

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Bibliographic Details
Main Authors: Yu, Yongchao, Joshi, Pooran, Bridges, Denzel, Fieser, David, Hu, Anming
Other Authors: School of Mechanical and Aerospace Engineering
Format: Article
Language:English
Published: 2023
Subjects:
Engineering::Mechanical engineering
Memristor
Tellurium Nanotube
Online Access:https://hdl.handle.net/10356/169593
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/169593

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