Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor

Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femto...

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Main Authors: Yu, Yongchao, Joshi, Pooran, Bridges, Denzel, Fieser, David, Hu, Anming
Other Authors: School of Mechanical and Aerospace Engineering
Format: Article
Language:English
Published: 2023
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Online Access:https://hdl.handle.net/10356/169593
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-1695932023-07-29T16:48:22Z Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor Yu, Yongchao Joshi, Pooran Bridges, Denzel Fieser, David Hu, Anming School of Mechanical and Aerospace Engineering Engineering::Mechanical engineering Memristor Tellurium Nanotube Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femtosecond laser nano-joining method. The temperature for the entire fabrication process was maintained below 190 °C. A femtosecond laser joining technique was used to form nanowire memristor units with enhanced properties. Femtosecond (fs) laser-irradiated silver-tellurium nanotube-silver structures resulted in plasmonic-enhanced optical joining with minimal local thermal effects. This produced a junction between the Te nanotube and the silver film substrate with enhanced electrical contacts. Noticeable changes in memristor behavior were observed after fs laser irradiation. Capacitor-coupled multilevel memristor behavior was observed. Compared to previous metal oxide nanowire-based memristors, the reported Te nanotube memristor system displayed a nearly two-order stronger current response. The research displays that the multileveled resistance state is rewritable with a negative bias. Published version 2023-07-25T06:35:47Z 2023-07-25T06:35:47Z 2023 Journal Article Yu, Y., Joshi, P., Bridges, D., Fieser, D. & Hu, A. (2023). Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor. Nanomaterials, 13(5), 789-. https://dx.doi.org/10.3390/nano13050789 2079-4991 https://hdl.handle.net/10356/169593 10.3390/nano13050789 36903667 2-s2.0-85149691130 5 13 789 en Nanomaterials © 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Mechanical engineering
Memristor
Tellurium Nanotube
spellingShingle Engineering::Mechanical engineering
Memristor
Tellurium Nanotube
Yu, Yongchao
Joshi, Pooran
Bridges, Denzel
Fieser, David
Hu, Anming
Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor
description Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femtosecond laser nano-joining method. The temperature for the entire fabrication process was maintained below 190 °C. A femtosecond laser joining technique was used to form nanowire memristor units with enhanced properties. Femtosecond (fs) laser-irradiated silver-tellurium nanotube-silver structures resulted in plasmonic-enhanced optical joining with minimal local thermal effects. This produced a junction between the Te nanotube and the silver film substrate with enhanced electrical contacts. Noticeable changes in memristor behavior were observed after fs laser irradiation. Capacitor-coupled multilevel memristor behavior was observed. Compared to previous metal oxide nanowire-based memristors, the reported Te nanotube memristor system displayed a nearly two-order stronger current response. The research displays that the multileveled resistance state is rewritable with a negative bias.
author2 School of Mechanical and Aerospace Engineering
author_facet School of Mechanical and Aerospace Engineering
Yu, Yongchao
Joshi, Pooran
Bridges, Denzel
Fieser, David
Hu, Anming
format Article
author Yu, Yongchao
Joshi, Pooran
Bridges, Denzel
Fieser, David
Hu, Anming
author_sort Yu, Yongchao
title Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor
title_short Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor
title_full Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor
title_fullStr Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor
title_full_unstemmed Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor
title_sort femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor
publishDate 2023
url https://hdl.handle.net/10356/169593
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