Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor
Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femto...
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sg-ntu-dr.10356-1695932023-07-29T16:48:22Z Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor Yu, Yongchao Joshi, Pooran Bridges, Denzel Fieser, David Hu, Anming School of Mechanical and Aerospace Engineering Engineering::Mechanical engineering Memristor Tellurium Nanotube Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femtosecond laser nano-joining method. The temperature for the entire fabrication process was maintained below 190 °C. A femtosecond laser joining technique was used to form nanowire memristor units with enhanced properties. Femtosecond (fs) laser-irradiated silver-tellurium nanotube-silver structures resulted in plasmonic-enhanced optical joining with minimal local thermal effects. This produced a junction between the Te nanotube and the silver film substrate with enhanced electrical contacts. Noticeable changes in memristor behavior were observed after fs laser irradiation. Capacitor-coupled multilevel memristor behavior was observed. Compared to previous metal oxide nanowire-based memristors, the reported Te nanotube memristor system displayed a nearly two-order stronger current response. The research displays that the multileveled resistance state is rewritable with a negative bias. Published version 2023-07-25T06:35:47Z 2023-07-25T06:35:47Z 2023 Journal Article Yu, Y., Joshi, P., Bridges, D., Fieser, D. & Hu, A. (2023). Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor. Nanomaterials, 13(5), 789-. https://dx.doi.org/10.3390/nano13050789 2079-4991 https://hdl.handle.net/10356/169593 10.3390/nano13050789 36903667 2-s2.0-85149691130 5 13 789 en Nanomaterials © 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). application/pdf |
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Engineering::Mechanical engineering Memristor Tellurium Nanotube Yu, Yongchao Joshi, Pooran Bridges, Denzel Fieser, David Hu, Anming Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor |
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Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femtosecond laser nano-joining method. The temperature for the entire fabrication process was maintained below 190 °C. A femtosecond laser joining technique was used to form nanowire memristor units with enhanced properties. Femtosecond (fs) laser-irradiated silver-tellurium nanotube-silver structures resulted in plasmonic-enhanced optical joining with minimal local thermal effects. This produced a junction between the Te nanotube and the silver film substrate with enhanced electrical contacts. Noticeable changes in memristor behavior were observed after fs laser irradiation. Capacitor-coupled multilevel memristor behavior was observed. Compared to previous metal oxide nanowire-based memristors, the reported Te nanotube memristor system displayed a nearly two-order stronger current response. The research displays that the multileveled resistance state is rewritable with a negative bias. |
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School of Mechanical and Aerospace Engineering |
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School of Mechanical and Aerospace Engineering Yu, Yongchao Joshi, Pooran Bridges, Denzel Fieser, David Hu, Anming |
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Article |
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Yu, Yongchao Joshi, Pooran Bridges, Denzel Fieser, David Hu, Anming |
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Yu, Yongchao |
title |
Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor |
title_short |
Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor |
title_full |
Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor |
title_fullStr |
Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor |
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Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor |
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femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor |
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2023 |
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https://hdl.handle.net/10356/169593 |
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