Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor
Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femto...
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| Main Authors: | , , , , |
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| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2023
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/169593 |
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| 機構: | Nanyang Technological University |
| 語言: | English |