Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor

• Main Authors: Liu, B., Gong, X., Zhan, C., Han, G., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/70074
• Institution: National University of Singapore

10.1149/05009.0023ecst