Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor

10.1149/05009.0023ecst

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Bibliographic Details
Main Authors:	Liu, B., Gong, X., Zhan, C., Han, G., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/70074
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-70074
record_format	dspace
spelling	sg-nus-scholar.10635-700742023-10-30T08:41:38Z Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor Liu, B. Gong, X. Zhan, C. Han, G. Daval, N. Veytizou, C. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/05009.0023ecst ECS Transactions 50 9 23-30 2014-06-19T03:07:55Z 2014-06-19T03:07:55Z 2012 Conference Paper Liu, B., Gong, X., Zhan, C., Han, G., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C. (2012). Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor. ECS Transactions 50 (9) : 23-30. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0023ecst 9781607683575 19385862 http://scholarbank.nus.edu.sg/handle/10635/70074 000338015300003 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1149/05009.0023ecst
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, B. Gong, X. Zhan, C. Han, G. Daval, N. Veytizou, C. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C.
format	Conference or Workshop Item
author	Liu, B. Gong, X. Zhan, C. Han, G. Daval, N. Veytizou, C. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C.
spellingShingle	Liu, B. Gong, X. Zhan, C. Han, G. Daval, N. Veytizou, C. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C. Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor
author_sort	Liu, B.
title	Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor
title_short	Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor
title_full	Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor
title_fullStr	Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor
title_full_unstemmed	Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor
title_sort	effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/70074
_version_	1781783135926616064

Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor

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