Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires
10.1063/1.3465327
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Main Authors: | Chin, H.-C., Gong, X., Ng, T.K., Loke, W.K., Wong, C.P., Shen, Z., Wicaksono, S., Yoon, S.F., Yeo, Y.-C. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/56758 |
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Institution: | National University of Singapore |
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