Phononic and structural response to strain in wurtzite-gallium nitride nanowires

• المؤلفون الرئيسيون: Loh, G. C., Teo, Edwin Hang Tong, Tay, Beng Kang
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Science::Physics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/94810; http://hdl.handle.net/10220/9320
• المؤسسة: Nanyang Technological University

Gallium nitride (GaN) nanowires exist in a myriad of cross-sectional shapes. In this study, a series of classical molecular dynamics simulations is performed to investigate the strain-phononics-structure relationship in rectangular and triangular wurtzite-GaN nanowires. The thermal conductivity of t...