Thermal modelling of gallium nitride-based transistor device on diamond substrate

• المؤلف الرئيسي: Soh, Ming Wee
• مؤلفون آخرون: Radhakrishnan K
• التنسيق: Final Year Project
• اللغة: English
• منشور في: Nanyang Technological University 2023
• الموضوعات: Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/167415
• المؤسسة: Nanyang Technological University

Gallium nitride high electron mobility transistors (GaN HEMTs) have gained popularity in recent years in power electronic applications due to their higher power density, faster switching speeds, high operating temperatures, and improved efficiency as compared to traditional silicon (Si)-based transi...