Thermal modelling of gallium nitride-based transistor device on diamond substrate

• Main Author: Soh, Ming Wee
• Other Authors: Radhakrishnan K
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2023
• Subjects: Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/167415
• Institution: Nanyang Technological University

Gallium nitride high electron mobility transistors (GaN HEMTs) have gained popularity in recent years in power electronic applications due to their higher power density, faster switching speeds, high operating temperatures, and improved efficiency as compared to traditional silicon (Si)-based transi...