Thermal modelling of gallium nitride-based transistor device on diamond substrate
Gallium nitride high electron mobility transistors (GaN HEMTs) have gained popularity in recent years in power electronic applications due to their higher power density, faster switching speeds, high operating temperatures, and improved efficiency as compared to traditional silicon (Si)-based transi...
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| 格式: | Final Year Project |
| 語言: | English |
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Nanyang Technological University
2023
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| 在線閱讀: | https://hdl.handle.net/10356/167415 |
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| 機構: | Nanyang Technological University |
| 語言: | English |