Nitrogen-mediated aligned growth of hexagonal BN films for reliable high-performance InSe transistors

• Main Authors: Chng, Soon Siang, Zhu, Minmin, Wu, Jing, Wang, Xizu, Ng, Zhi Kai, Zhang, Keke, Liu, Chongyang, Shakerzadeh, Maziar, Tsang, Siuhon, Teo, Edwin Hang Tong
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Engineering::Materials::Microelectronics and semiconductor materials::Thin films; Hexagonal Boron Nitride; Indium Selenide Transistors
• Online Access: https://hdl.handle.net/10356/139426
• Institution: Nanyang Technological University

Orientation controlled hexagonal boron nitride (h-BN) films exhibit excellent mechanical and thermal properties, making them attractive for diverse applications. However, wafer-scale synthesis of vertically oriented h-BN films is still a significant challenge. Herein, utilizing high power impulse ma...