Nitrogen-mediated aligned growth of hexagonal BN films for reliable high-performance InSe transistors
Orientation controlled hexagonal boron nitride (h-BN) films exhibit excellent mechanical and thermal properties, making them attractive for diverse applications. However, wafer-scale synthesis of vertically oriented h-BN films is still a significant challenge. Herein, utilizing high power impulse ma...
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Main Authors: | Chng, Soon Siang, Zhu, Minmin, Wu, Jing, Wang, Xizu, Ng, Zhi Kai, Zhang, Keke, Liu, Chongyang, Shakerzadeh, Maziar, Tsang, Siuhon, Teo, Edwin Hang Tong |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2020
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/139426 |
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Institution: | Nanyang Technological University |
Language: | English |
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