Enhancement in performance and reliability of transparent IGZO thin-film transistors by ITO/Ti stacked source/drain contacts

• Main Authors: Li, Yuanbo, Chen, Tupei
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2024
• Subjects: Engineering; Transparent Thin Film Transistor; Laminated Structures
• Online Access: https://hdl.handle.net/10356/173472
• Institution: Nanyang Technological University

Enhancement in performance and reliability of transparent IGZO thin-film transistor (TFT) was achieved by adopting a laminated structure with a thin ITO layer and an ultrathin Ti layer as the source/drain (S/D) contacts. Compared with the transparent TFT with pure ITO S/D contacts, the transparent T...