Hung, B., Chiang, K., Huang, C., Chin, A., McAlister, S., & ENGINEERING, E. &. C. (2014). High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric.
استشهاد بنمط شيكاغوHung, B.F., K.C Chiang, C.C Huang, A. Chin, S.P McAlister, و ELECTRICAL & COMPUTER ENGINEERING. High-performance Poly-silicon TFTs Incorporating LaA1O3 As the Gate Dielectric. 2014.
MLA استشهادHung, B.F., et al. High-performance Poly-silicon TFTs Incorporating LaA1O3 As the Gate Dielectric. 2014.
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