The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs

• Main Authors: Yu, D.S., Liao, C.C., Cheng, C.F., Chin, A., Li, M.F., McAlister, S.P.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Bias-temperature instability (BTI); Germanium-on-insulator (GOI); High Κ; LaAlO3; Metal gate; Three-dimensional (3-D)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83161
• Institution: National University of Singapore

10.1109/LED.2005.848130