The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs

The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs

10.1109/LED.2005.848130

Saved in:
Bibliographic Details
Main Authors: Yu, D.S., Liao, C.C., Cheng, C.F., Chin, A., Li, M.F., McAlister, S.P.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Bias-temperature instability (BTI)
Germanium-on-insulator (GOI)
High Κ
LaAlO3
Metal gate
Three-dimensional (3-D)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83161
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1109/LED.2005.848130

Similar Items