The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs

10.1109/LED.2005.848130

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Bibliographic Details
Main Authors:	Yu, D.S., Liao, C.C., Cheng, C.F., Chin, A., Li, M.F., McAlister, S.P.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Bias-temperature instability (BTI) Germanium-on-insulator (GOI) High Κ LaAlO3 Metal gate Three-dimensional (3-D)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83161
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83161
record_format	dspace
spelling	sg-nus-scholar.10635-831612023-10-25T07:40:38Z The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs Yu, D.S. Liao, C.C. Cheng, C.F. Chin, A. Li, M.F. McAlister, S.P. ELECTRICAL & COMPUTER ENGINEERING Bias-temperature instability (BTI) Germanium-on-insulator (GOI) High Κ LaAlO3 Metal gate Three-dimensional (3-D) 10.1109/LED.2005.848130 IEEE Electron Device Letters 26 6 407-409 EDLED 2014-10-07T04:38:01Z 2014-10-07T04:38:01Z 2005-06 Article Yu, D.S., Liao, C.C., Cheng, C.F., Chin, A., Li, M.F., McAlister, S.P. (2005-06). The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs. IEEE Electron Device Letters 26 (6) : 407-409. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.848130 07413106 http://scholarbank.nus.edu.sg/handle/10635/83161 000229522000021 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Bias-temperature instability (BTI) Germanium-on-insulator (GOI) High Κ LaAlO3 Metal gate Three-dimensional (3-D)
spellingShingle	Bias-temperature instability (BTI) Germanium-on-insulator (GOI) High Κ LaAlO3 Metal gate Three-dimensional (3-D) Yu, D.S. Liao, C.C. Cheng, C.F. Chin, A. Li, M.F. McAlister, S.P. The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs
description	10.1109/LED.2005.848130
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yu, D.S. Liao, C.C. Cheng, C.F. Chin, A. Li, M.F. McAlister, S.P.
format	Article
author	Yu, D.S. Liao, C.C. Cheng, C.F. Chin, A. Li, M.F. McAlister, S.P.
author_sort	Yu, D.S.
title	The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs
title_short	The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs
title_full	The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs
title_fullStr	The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs
title_full_unstemmed	The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs
title_sort	effect of iro2-iro2- hf-laalo3 gate dielectric on the bias-temperature instability of 3-d goi cmosfets
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83161
_version_	1781784317582639104

The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs

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