Three-dimensional metal gate-high-Κ-GOI CMOSFETs on 1-poly-6-metal 0.18-μm Si devices

• Main Authors: Yu, D.S., Chin, A., Liao, C.C., Lee, C.F., Cheng, C.F., Li, M.F., Yoo, W.J., McAlister, S.P.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Ge-on-insulator (GOI); LaA1O3; Metal-gate; MOSFET; Three-dimensional (3-D)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83205
• Institution: National University of Singapore

10.1109/LED.2004.841861