Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack

• Main Authors: Lee, P.S., Mangelinck, D., Pey, K.L., Ding, J., Chi, D.Z., Osipowicz, T., Dai, J.Y., See, A.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Layer inversion; LPCVD; Ni silicidation; Ni(Pt)Si; RTCVD
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83704
• Institution: National University of Singapore

10.1016/S0167-9317(01)00592-5