Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET

Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET

US7504329

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Main Authors: YU, HONGYU, JINGDE, CHEN, MINGFU, LI, KWONG, DIM-LEE, BIESEMANS, SERGE, KITTL, JORGE ADRIAN
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Patent
Published: 2012
Online Access:http://scholarbank.nus.edu.sg/handle/10635/32777
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Institution: National University of Singapore
id sg-nus-scholar.10635-32777
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spelling sg-nus-scholar.10635-327772015-07-29T07:04:02Z Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET YU, HONGYU JINGDE, CHEN MINGFU, LI KWONG, DIM-LEE BIESEMANS, SERGE KITTL, JORGE ADRIAN ELECTRICAL & COMPUTER ENGINEERING INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) (LEUVEN, BE) NATIONAL UNIVERSITY OF SINGAPORE (NUS) (SINGAPORE, SG) TEXAS INSTRUMENTS INCORPORATED US7504329 Granted Patent 2012-05-02T02:30:15Z 2012-05-02T02:30:15Z 2009-03-17 Patent YU, HONGYU,JINGDE, CHEN,MINGFU, LI,KWONG, DIM-LEE,BIESEMANS, SERGE,KITTL, JORGE ADRIAN (2009-03-17). Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/32777 NOT_IN_WOS PatSnap
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description US7504329
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
YU, HONGYU
JINGDE, CHEN
MINGFU, LI
KWONG, DIM-LEE
BIESEMANS, SERGE
KITTL, JORGE ADRIAN
format Patent
author YU, HONGYU
JINGDE, CHEN
MINGFU, LI
KWONG, DIM-LEE
BIESEMANS, SERGE
KITTL, JORGE ADRIAN
spellingShingle YU, HONGYU
JINGDE, CHEN
MINGFU, LI
KWONG, DIM-LEE
BIESEMANS, SERGE
KITTL, JORGE ADRIAN
Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET
author_sort YU, HONGYU
title Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET
title_short Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET
title_full Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET
title_fullStr Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET
title_full_unstemmed Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET
title_sort method of forming a yb-doped ni full silicidation low work function gate electrode for n-mosfet
publishDate 2012
url http://scholarbank.nus.edu.sg/handle/10635/32777
_version_ 1681081284872372224

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