Analysis and design of 60-GHz SPDT switch in 130-nm CMOS
This paper proposes a new 60-GHz single-pole-double-throw (SPDT) switch. It is designed in a 1.2-V 130-nm bulk CMOS and has a small core area of 222 μm × 92 μm. The switch exhibits measured insertion loss of 1.7 dB, isolation of 22 dB, input return loss of 20 dB, output return loss of 14 dB, and sim...
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格式: | Article |
語言: | English |
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2013
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在線閱讀: | https://hdl.handle.net/10356/96174 http://hdl.handle.net/10220/11418 |
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