Analysis and design of 60-GHz SPDT switch in 130-nm CMOS

• Main Authors: He, Jin, Xiong, Yong-Zhong, Zhang, Yue Ping
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/96174; http://hdl.handle.net/10220/11418
• Institution: Nanyang Technological University

This paper proposes a new 60-GHz single-pole-double-throw (SPDT) switch. It is designed in a 1.2-V 130-nm bulk CMOS and has a small core area of 222 μm × 92 μm. The switch exhibits measured insertion loss of 1.7 dB, isolation of 22 dB, input return loss of 20 dB, output return loss of 14 dB, and sim...