Analysis and design of 60-GHz SPDT switch in 130-nm CMOS

This paper proposes a new 60-GHz single-pole-double-throw (SPDT) switch. It is designed in a 1.2-V 130-nm bulk CMOS and has a small core area of 222 μm × 92 μm. The switch exhibits measured insertion loss of 1.7 dB, isolation of 22 dB, input return loss of 20 dB, output return loss of 14 dB, and sim...

Full description

Saved in:

Bibliographic Details
Main Authors:	He, Jin, Xiong, Yong-Zhong, Zhang, Yue Ping
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2013
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/96174 http://hdl.handle.net/10220/11418
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-96174
record_format	dspace
spelling	sg-ntu-dr.10356-961742020-03-07T14:02:36Z Analysis and design of 60-GHz SPDT switch in 130-nm CMOS He, Jin Xiong, Yong-Zhong Zhang, Yue Ping School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering This paper proposes a new 60-GHz single-pole-double-throw (SPDT) switch. It is designed in a 1.2-V 130-nm bulk CMOS and has a small core area of 222 μm × 92 μm. The switch exhibits measured insertion loss of 1.7 dB, isolation of 22 dB, input return loss of 20 dB, output return loss of 14 dB, and simulated power-handling capability of 13.8 dBm at 60 GHz. The proposed SPDT switch demonstrates such superior performances and consumes a much smaller die area to those of other SPDT switches, and therefore has potential to be used in highly integrated 60-GHz CMOS radios. 2013-07-15T06:18:52Z 2019-12-06T19:26:36Z 2013-07-15T06:18:52Z 2019-12-06T19:26:36Z 2012 2012 Journal Article He, J., Xiong, Y.-Z., & Zhang, Y. P. (2012). Analysis and Design of 60-GHz SPDT Switch in 130-nm CMOS. IEEE Transactions on Microwave Theory and Techniques, 60(10), 3113-3119. https://hdl.handle.net/10356/96174 http://hdl.handle.net/10220/11418 10.1109/TMTT.2012.2211380 en IEEE transactions on microwave theory and techniques © 2012 IEEE.
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering He, Jin Xiong, Yong-Zhong Zhang, Yue Ping Analysis and design of 60-GHz SPDT switch in 130-nm CMOS
description	This paper proposes a new 60-GHz single-pole-double-throw (SPDT) switch. It is designed in a 1.2-V 130-nm bulk CMOS and has a small core area of 222 μm × 92 μm. The switch exhibits measured insertion loss of 1.7 dB, isolation of 22 dB, input return loss of 20 dB, output return loss of 14 dB, and simulated power-handling capability of 13.8 dBm at 60 GHz. The proposed SPDT switch demonstrates such superior performances and consumes a much smaller die area to those of other SPDT switches, and therefore has potential to be used in highly integrated 60-GHz CMOS radios.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering He, Jin Xiong, Yong-Zhong Zhang, Yue Ping
format	Article
author	He, Jin Xiong, Yong-Zhong Zhang, Yue Ping
author_sort	He, Jin
title	Analysis and design of 60-GHz SPDT switch in 130-nm CMOS
title_short	Analysis and design of 60-GHz SPDT switch in 130-nm CMOS
title_full	Analysis and design of 60-GHz SPDT switch in 130-nm CMOS
title_fullStr	Analysis and design of 60-GHz SPDT switch in 130-nm CMOS
title_full_unstemmed	Analysis and design of 60-GHz SPDT switch in 130-nm CMOS
title_sort	analysis and design of 60-ghz spdt switch in 130-nm cmos
publishDate	2013
url	https://hdl.handle.net/10356/96174 http://hdl.handle.net/10220/11418
_version_	1681035646770085888

Analysis and design of 60-GHz SPDT switch in 130-nm CMOS

Similar Items