A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept

• Main Authors: Meng, Fanyi, Ma, Kaixue, Yeo, Kiat Seng, Boon, Chirn Chye, Lim, Wei Meng, Xu, Shanshan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: Coupled-lines; Miniaturization; Silicon; Single-pole double-throw (SPDT) switches; Switchable resonator; CMOS
• Online Access: https://hdl.handle.net/10356/81372; http://hdl.handle.net/10220/39540
• Institution: Nanyang Technological University

The paper reports a SPDT switch operating from 220 to 285 GHz in 65-nm bulk CMOS. The switchable resonator concept by using three coupled-lines topology is proposed and adopted in the switch design. Equivalent circuit models are introduced for analyzing the operation mechanism of proposed switc...