A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept

The paper reports a SPDT switch operating from 220 to 285 GHz in 65-nm bulk CMOS. The switchable resonator concept by using three coupled-lines topology is proposed and adopted in the switch design. Equivalent circuit models are introduced for analyzing the operation mechanism of proposed switc...

Full description

Saved in:
Bibliographic Details
Main Authors: Meng, Fanyi, Ma, Kaixue, Yeo, Kiat Seng, Boon, Chirn Chye, Lim, Wei Meng, Xu, Shanshan
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2016
Subjects:
Online Access:https://hdl.handle.net/10356/81372
http://hdl.handle.net/10220/39540
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-81372
record_format dspace
spelling sg-ntu-dr.10356-813722020-03-07T13:57:25Z A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept Meng, Fanyi Ma, Kaixue Yeo, Kiat Seng Boon, Chirn Chye Lim, Wei Meng Xu, Shanshan School of Electrical and Electronic Engineering Coupled-lines Miniaturization Silicon Single-pole double-throw (SPDT) switches Switchable resonator CMOS The paper reports a SPDT switch operating from 220 to 285 GHz in 65-nm bulk CMOS. The switchable resonator concept by using three coupled-lines topology is proposed and adopted in the switch design. Equivalent circuit models are introduced for analyzing the operation mechanism of proposed switch. The fabricated SPDT switch features measured insertion loss of 4.2 dB including RF pad losses, isolation of 19 dB, return loss of better than 10 dB, simulated P1dB of 9.2 dBm, and zero power consumption. To the best of authors' knowledge, this switch achieves the highest operating frequency and smallest chip size among reported SPDT switches in CMOS and BiCMOS technologies. Accepted version 2016-01-04T06:47:26Z 2019-12-06T14:29:31Z 2016-01-04T06:47:26Z 2019-12-06T14:29:31Z 2015 Journal Article Meng, F., Ma, K., Yeo, K. S., Boon, C. C., Lim, W. M., & Xu, S. (2015). A 220–285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept. IEEE Transactions on Terahertz Science and Technology, 5(4), 649-651. 2156-342X https://hdl.handle.net/10356/81372 http://hdl.handle.net/10220/39540 10.1109/TTHZ.2015.2436216 en IEEE Transactions on Terahertz Science and Technology © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/TTHZ.2015.2436216]. 3 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Coupled-lines
Miniaturization
Silicon
Single-pole double-throw (SPDT) switches
Switchable resonator
CMOS
spellingShingle Coupled-lines
Miniaturization
Silicon
Single-pole double-throw (SPDT) switches
Switchable resonator
CMOS
Meng, Fanyi
Ma, Kaixue
Yeo, Kiat Seng
Boon, Chirn Chye
Lim, Wei Meng
Xu, Shanshan
A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept
description The paper reports a SPDT switch operating from 220 to 285 GHz in 65-nm bulk CMOS. The switchable resonator concept by using three coupled-lines topology is proposed and adopted in the switch design. Equivalent circuit models are introduced for analyzing the operation mechanism of proposed switch. The fabricated SPDT switch features measured insertion loss of 4.2 dB including RF pad losses, isolation of 19 dB, return loss of better than 10 dB, simulated P1dB of 9.2 dBm, and zero power consumption. To the best of authors' knowledge, this switch achieves the highest operating frequency and smallest chip size among reported SPDT switches in CMOS and BiCMOS technologies.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Meng, Fanyi
Ma, Kaixue
Yeo, Kiat Seng
Boon, Chirn Chye
Lim, Wei Meng
Xu, Shanshan
format Article
author Meng, Fanyi
Ma, Kaixue
Yeo, Kiat Seng
Boon, Chirn Chye
Lim, Wei Meng
Xu, Shanshan
author_sort Meng, Fanyi
title A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept
title_short A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept
title_full A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept
title_fullStr A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept
title_full_unstemmed A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept
title_sort 220-285 ghz spdt switch in 65-nm cmos using switchable resonator concept
publishDate 2016
url https://hdl.handle.net/10356/81372
http://hdl.handle.net/10220/39540
_version_ 1681039247499329536