A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept
The paper reports a SPDT switch operating from 220 to 285 GHz in 65-nm bulk CMOS. The switchable resonator concept by using three coupled-lines topology is proposed and adopted in the switch design. Equivalent circuit models are introduced for analyzing the operation mechanism of proposed switc...
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sg-ntu-dr.10356-813722020-03-07T13:57:25Z A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept Meng, Fanyi Ma, Kaixue Yeo, Kiat Seng Boon, Chirn Chye Lim, Wei Meng Xu, Shanshan School of Electrical and Electronic Engineering Coupled-lines Miniaturization Silicon Single-pole double-throw (SPDT) switches Switchable resonator CMOS The paper reports a SPDT switch operating from 220 to 285 GHz in 65-nm bulk CMOS. The switchable resonator concept by using three coupled-lines topology is proposed and adopted in the switch design. Equivalent circuit models are introduced for analyzing the operation mechanism of proposed switch. The fabricated SPDT switch features measured insertion loss of 4.2 dB including RF pad losses, isolation of 19 dB, return loss of better than 10 dB, simulated P1dB of 9.2 dBm, and zero power consumption. To the best of authors' knowledge, this switch achieves the highest operating frequency and smallest chip size among reported SPDT switches in CMOS and BiCMOS technologies. Accepted version 2016-01-04T06:47:26Z 2019-12-06T14:29:31Z 2016-01-04T06:47:26Z 2019-12-06T14:29:31Z 2015 Journal Article Meng, F., Ma, K., Yeo, K. S., Boon, C. C., Lim, W. M., & Xu, S. (2015). A 220–285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept. IEEE Transactions on Terahertz Science and Technology, 5(4), 649-651. 2156-342X https://hdl.handle.net/10356/81372 http://hdl.handle.net/10220/39540 10.1109/TTHZ.2015.2436216 en IEEE Transactions on Terahertz Science and Technology © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/TTHZ.2015.2436216]. 3 p. application/pdf |
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| language |
English |
| topic |
Coupled-lines Miniaturization Silicon Single-pole double-throw (SPDT) switches Switchable resonator CMOS |
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Coupled-lines Miniaturization Silicon Single-pole double-throw (SPDT) switches Switchable resonator CMOS Meng, Fanyi Ma, Kaixue Yeo, Kiat Seng Boon, Chirn Chye Lim, Wei Meng Xu, Shanshan A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept |
| description |
The paper reports a SPDT switch operating from
220 to 285 GHz in 65-nm bulk CMOS. The switchable resonator
concept by using three coupled-lines topology is proposed and
adopted in the switch design. Equivalent circuit models are
introduced for analyzing the operation mechanism of proposed
switch. The fabricated SPDT switch features measured insertion
loss of 4.2 dB including RF pad losses, isolation of 19 dB, return
loss of better than 10 dB, simulated P1dB of 9.2 dBm, and zero
power consumption. To the best of authors' knowledge, this
switch achieves the highest operating frequency and smallest chip
size among reported SPDT switches in CMOS and BiCMOS
technologies. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Meng, Fanyi Ma, Kaixue Yeo, Kiat Seng Boon, Chirn Chye Lim, Wei Meng Xu, Shanshan |
| format |
Article |
| author |
Meng, Fanyi Ma, Kaixue Yeo, Kiat Seng Boon, Chirn Chye Lim, Wei Meng Xu, Shanshan |
| author_sort |
Meng, Fanyi |
| title |
A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept |
| title_short |
A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept |
| title_full |
A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept |
| title_fullStr |
A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept |
| title_full_unstemmed |
A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept |
| title_sort |
220-285 ghz spdt switch in 65-nm cmos using switchable resonator concept |
| publishDate |
2016 |
| url |
https://hdl.handle.net/10356/81372 http://hdl.handle.net/10220/39540 |
| _version_ |
1681039247499329536 |