A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept
The paper reports a SPDT switch operating from 220 to 285 GHz in 65-nm bulk CMOS. The switchable resonator concept by using three coupled-lines topology is proposed and adopted in the switch design. Equivalent circuit models are introduced for analyzing the operation mechanism of proposed switc...
محفوظ في:
المؤلفون الرئيسيون: | , , , , , |
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مؤلفون آخرون: | |
التنسيق: | مقال |
اللغة: | English |
منشور في: |
2016
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الموضوعات: | |
الوصول للمادة أونلاين: | https://hdl.handle.net/10356/81372 http://hdl.handle.net/10220/39540 |
الوسوم: |
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المؤسسة: | Nanyang Technological University |
اللغة: | English |
الملخص: | The paper reports a SPDT switch operating from
220 to 285 GHz in 65-nm bulk CMOS. The switchable resonator
concept by using three coupled-lines topology is proposed and
adopted in the switch design. Equivalent circuit models are
introduced for analyzing the operation mechanism of proposed
switch. The fabricated SPDT switch features measured insertion
loss of 4.2 dB including RF pad losses, isolation of 19 dB, return
loss of better than 10 dB, simulated P1dB of 9.2 dBm, and zero
power consumption. To the best of authors' knowledge, this
switch achieves the highest operating frequency and smallest chip
size among reported SPDT switches in CMOS and BiCMOS
technologies. |
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