Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process

Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process

10.1023/A:1006680617207

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Bibliographic Details
Main Authors: Jia, Y.M., Lim, C.W., Bourdillon, A.J., Boothroyd, C.
Other Authors: MATERIALS SCIENCE
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/107248
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/107248

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