Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process
10.1023/A:1006680617207
Saved in:
Main Authors: | , , , |
---|---|
Other Authors: | |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/107248 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
id |
sg-nus-scholar.10635-107248 |
---|---|
record_format |
dspace |
spelling |
sg-nus-scholar.10635-1072482023-10-25T22:29:33Z Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process Jia, Y.M. Lim, C.W. Bourdillon, A.J. Boothroyd, C. MATERIALS SCIENCE 10.1023/A:1006680617207 Journal of Materials Science Letters 18 5 385-388 JMSLD 2014-10-29T08:41:32Z 2014-10-29T08:41:32Z 1999-03-01 Article Jia, Y.M., Lim, C.W., Bourdillon, A.J., Boothroyd, C. (1999-03-01). Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process. Journal of Materials Science Letters 18 (5) : 385-388. ScholarBank@NUS Repository. https://doi.org/10.1023/A:1006680617207 02618028 http://scholarbank.nus.edu.sg/handle/10635/107248 000080387100013 Scopus |
institution |
National University of Singapore |
building |
NUS Library |
continent |
Asia |
country |
Singapore Singapore |
content_provider |
NUS Library |
collection |
ScholarBank@NUS |
description |
10.1023/A:1006680617207 |
author2 |
MATERIALS SCIENCE |
author_facet |
MATERIALS SCIENCE Jia, Y.M. Lim, C.W. Bourdillon, A.J. Boothroyd, C. |
format |
Article |
author |
Jia, Y.M. Lim, C.W. Bourdillon, A.J. Boothroyd, C. |
spellingShingle |
Jia, Y.M. Lim, C.W. Bourdillon, A.J. Boothroyd, C. Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process |
author_sort |
Jia, Y.M. |
title |
Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process |
title_short |
Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process |
title_full |
Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process |
title_fullStr |
Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process |
title_full_unstemmed |
Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process |
title_sort |
transmission electron microscopy observation of cmos devices of titanium self-aligned silicide technology with nitrogen (n+) implantation process |
publishDate |
2014 |
url |
http://scholarbank.nus.edu.sg/handle/10635/107248 |
_version_ |
1781788364059443200 |