Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process

10.1023/A:1006680617207

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Main Authors: Jia, Y.M., Lim, C.W., Bourdillon, A.J., Boothroyd, C.
Other Authors: MATERIALS SCIENCE
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/107248
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-1072482023-10-25T22:29:33Z Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process Jia, Y.M. Lim, C.W. Bourdillon, A.J. Boothroyd, C. MATERIALS SCIENCE 10.1023/A:1006680617207 Journal of Materials Science Letters 18 5 385-388 JMSLD 2014-10-29T08:41:32Z 2014-10-29T08:41:32Z 1999-03-01 Article Jia, Y.M., Lim, C.W., Bourdillon, A.J., Boothroyd, C. (1999-03-01). Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process. Journal of Materials Science Letters 18 (5) : 385-388. ScholarBank@NUS Repository. https://doi.org/10.1023/A:1006680617207 02618028 http://scholarbank.nus.edu.sg/handle/10635/107248 000080387100013 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1023/A:1006680617207
author2 MATERIALS SCIENCE
author_facet MATERIALS SCIENCE
Jia, Y.M.
Lim, C.W.
Bourdillon, A.J.
Boothroyd, C.
format Article
author Jia, Y.M.
Lim, C.W.
Bourdillon, A.J.
Boothroyd, C.
spellingShingle Jia, Y.M.
Lim, C.W.
Bourdillon, A.J.
Boothroyd, C.
Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process
author_sort Jia, Y.M.
title Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process
title_short Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process
title_full Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process
title_fullStr Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process
title_full_unstemmed Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process
title_sort transmission electron microscopy observation of cmos devices of titanium self-aligned silicide technology with nitrogen (n+) implantation process
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/107248
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