Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices

by Yu, H.Y., Li, M.F., Lauwers, A., Kittl, J.A., Singanamalla, R., Veloso, A., Hoffmann, T., De Meyer, K., Jurczak, M., Absil, P., Biesemans, S.
Published 2014

Yb-doped Ni FUSI for the n-MOSFETs gate electrode application

by Chen, J.D., Yu, H.Y., Li, M.F., Kwong, D.-L., van Dal, M.J.H., Kittl, J.A., Lauwers, A., Absil, P., Jurczak, M., Biesemans, S.
Published 2014

Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETs

by Lousberg, G.P., Yu, H.Y., Froment, B., Li, M.F., Augendre, E., De Keersgieter, A., Demeurisse, C., Brus, S., Degroote, B., Hoffmann, T., Lauwers, A., DePotter, M., Kubicek, S., Anil, K., Absil, P., Jurczak, M., Biesemans, S.
Published 2014

Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edge

by Yu, H.Y., Chen, J.D., Li, M.F., Lee, S.J., Kwong, D.L., Van Dal, M., Kittl, J.A., Lauwers, A., Augendre, E., Kubicek, S., Zhao, C., Bender, H., Brijs, B., Geenen, L., Benedetti, A., Absil, P., Jurczak, M., Biesemans, S.
Published 2014

Demonstration of a new approach towards 0.25V Low-Vt CMOS using Ni-based FUSI

by Yu, H.Y., Kittl, J.A., Lauwers, A., Singanamalla, R., Demeurisse, C., Kubicek, S., Augendre, E., Veloso, A., Brus, S., Vrancken, C., Hoffmann, T., Mertens, S., Onsia, B., Verbeeck, R., Demand, M., Rothchild, A., Froment, B., Van Dal, M., De Meyer, K., Li, M.F., Chen, J.D., Jurczak, M., Absil, P.P., Biesemans, S.
Published 2014