Yb-doped Ni FUSI for the n-MOSFETs gate electrode application

by Chen, J.D., Yu, H.Y., Li, M.F., Kwong, D.-L., van Dal, M.J.H., Kittl, J.A., Lauwers, A., Absil, P., Jurczak, M., Biesemans, S.
Published 2014

Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration

by Holland, M, Van Dal, M, Duriez, B, Oxland, R, Vellianitis, G, Doornbos, G, Afzalian, A, Chen, T.-K, Hsieh, C.-H, Ramvall, P, Vasen, T, Yeo, Y.-C, Passlack, M
Published 2020

Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edge

by Yu, H.Y., Chen, J.D., Li, M.F., Lee, S.J., Kwong, D.L., Van Dal, M., Kittl, J.A., Lauwers, A., Augendre, E., Kubicek, S., Zhao, C., Bender, H., Brijs, B., Geenen, L., Benedetti, A., Absil, P., Jurczak, M., Biesemans, S.
Published 2014

Demonstration of a new approach towards 0.25V Low-Vt CMOS using Ni-based FUSI

by Yu, H.Y., Kittl, J.A., Lauwers, A., Singanamalla, R., Demeurisse, C., Kubicek, S., Augendre, E., Veloso, A., Brus, S., Vrancken, C., Hoffmann, T., Mertens, S., Onsia, B., Verbeeck, R., Demand, M., Rothchild, A., Froment, B., Van Dal, M., De Meyer, K., Li, M.F., Chen, J.D., Jurczak, M., Absil, P.P., Biesemans, S.
Published 2014