Temperature Measurement on Micromachined IR Bolometers Using an Infrared Microscope

by Trigg, A.D., Sridhar, U., Lee, H.S., Karunasiri, G.
Published 2014

Work function tuning of metal nitride electrodes for advanced CMOS devices

by Ren, C., Faizhal, B.B., Chan, D.S.H., Li, M.-F., Yeo, Y.-C., Trigg, A.D., Balasubramanian, N., Kwong, D.-L.
Published 2014

Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices

by Ren, C., Chan, D.S.H., Faizhal, B.B., Li, M.-F., Yeo, Y.-C., Trigg, A.D., Agarwal, A., Balasubramanian, N., Pan, J.S., Lim, P.C., Kwong, D.-L.
Published 2014

Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration process

by Wang, X.P., Li, M.-F., Yu, H.Y., Ren, C., Loh, W.Y., Zhu, C.X., Chin, A., Trigg, A.D., Yeo, Y.-C., Biesemans, S., Lo, G.Q., Kwong, D.L.
Published 2014

Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors

by Ren, C., Chan, D.S.H., Wang, X.P., Faizhal, B.B., Li, M.-F., Yeo, Y.-C., Trigg, A.D., Agarwal, A., Balasubramanian, N., Pan, J.S., Lim, P.C., Huan, A.C.H., Kwong, D.-L.
Published 2014

Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices

by Wang, X.P., Lim, A.E.-J., Yu, H.Y., Li, M.-F., Ren, C., Loh, W.-Y., Zhu, C.X., Chin, A., Trigg, A.D., Yeo, Y.-C., Biesemans, S., Lo, G.-Q., Kwong, D.-L.
Published 2014