Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices

• Main Authors: Ren, C., Chan, D.S.H., Faizhal, B.B., Li, M.-F., Yeo, Y.-C., Trigg, A.D., Agarwal, A., Balasubramanian, N., Pan, J.S., Lim, P.C., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83882
• Institution: National University of Singapore

10.1109/.2005.1469204