Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors
10.1063/1.1947901
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Main Authors: | , , , , , , , , , , , , |
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Other Authors: | |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/57056 |
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Institution: | National University of Singapore |