Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors

10.1063/1.1947901

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Bibliographic Details
Main Authors:	Ren, C., Chan, D.S.H., Wang, X.P., Faizhal, B.B., Li, M.-F., Yeo, Y.-C., Trigg, A.D., Agarwal, A., Balasubramanian, N., Pan, J.S., Lim, P.C., Huan, A.C.H., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57056
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-57056
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spelling	sg-nus-scholar.10635-570562023-10-31T07:22:25Z Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors Ren, C. Chan, D.S.H. Wang, X.P. Faizhal, B.B. Li, M.-F. Yeo, Y.-C. Trigg, A.D. Agarwal, A. Balasubramanian, N. Pan, J.S. Lim, P.C. Huan, A.C.H. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1947901 Applied Physics Letters 87 7 - APPLA 2014-06-17T03:01:45Z 2014-06-17T03:01:45Z 2005-08-15 Article Ren, C., Chan, D.S.H., Wang, X.P., Faizhal, B.B., Li, M.-F., Yeo, Y.-C., Trigg, A.D., Agarwal, A., Balasubramanian, N., Pan, J.S., Lim, P.C., Huan, A.C.H., Kwong, D.-L. (2005-08-15). Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters 87 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1947901 00036951 http://scholarbank.nus.edu.sg/handle/10635/57056 000231246000068 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.1947901
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ren, C. Chan, D.S.H. Wang, X.P. Faizhal, B.B. Li, M.-F. Yeo, Y.-C. Trigg, A.D. Agarwal, A. Balasubramanian, N. Pan, J.S. Lim, P.C. Huan, A.C.H. Kwong, D.-L.
format	Article
author	Ren, C. Chan, D.S.H. Wang, X.P. Faizhal, B.B. Li, M.-F. Yeo, Y.-C. Trigg, A.D. Agarwal, A. Balasubramanian, N. Pan, J.S. Lim, P.C. Huan, A.C.H. Kwong, D.-L.
spellingShingle	Ren, C. Chan, D.S.H. Wang, X.P. Faizhal, B.B. Li, M.-F. Yeo, Y.-C. Trigg, A.D. Agarwal, A. Balasubramanian, N. Pan, J.S. Lim, P.C. Huan, A.C.H. Kwong, D.-L. Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors
author_sort	Ren, C.
title	Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors
title_short	Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors
title_full	Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors
title_fullStr	Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors
title_full_unstemmed	Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors
title_sort	physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57056
_version_	1781781337976340480

Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors

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