Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors

Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors

10.1063/1.1947901

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Bibliographic Details
Main Authors: Ren, C., Chan, D.S.H., Wang, X.P., Faizhal, B.B., Li, M.-F., Yeo, Y.-C., Trigg, A.D., Agarwal, A., Balasubramanian, N., Pan, J.S., Lim, P.C., Huan, A.C.H., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57056
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Institution: National University of Singapore
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Summary:10.1063/1.1947901

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