Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices

10.1109/.2005.1469204

Saved in:

Bibliographic Details
Main Authors:	Ren, C., Chan, D.S.H., Faizhal, B.B., Li, M.-F., Yeo, Y.-C., Trigg, A.D., Agarwal, A., Balasubramanian, N., Pan, J.S., Lim, P.C., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83882
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-83882
record_format	dspace
spelling	sg-nus-scholar.10635-838822015-01-08T19:27:23Z Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices Ren, C. Chan, D.S.H. Faizhal, B.B. Li, M.-F. Yeo, Y.-C. Trigg, A.D. Agarwal, A. Balasubramanian, N. Pan, J.S. Lim, P.C. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1109/.2005.1469204 Digest of Technical Papers - Symposium on VLSI Technology 2005 42-43 DTPTE 2014-10-07T04:46:17Z 2014-10-07T04:46:17Z 2005 Conference Paper Ren, C.,Chan, D.S.H.,Faizhal, B.B.,Li, M.-F.,Yeo, Y.-C.,Trigg, A.D.,Agarwal, A.,Balasubramanian, N.,Pan, J.S.,Lim, P.C.,Kwong, D.-L. (2005). Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 42-43. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/.2005.1469204" target="_blank">https://doi.org/10.1109/.2005.1469204</a> 07431562 http://scholarbank.nus.edu.sg/handle/10635/83882 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/.2005.1469204
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ren, C. Chan, D.S.H. Faizhal, B.B. Li, M.-F. Yeo, Y.-C. Trigg, A.D. Agarwal, A. Balasubramanian, N. Pan, J.S. Lim, P.C. Kwong, D.-L.
format	Conference or Workshop Item
author	Ren, C. Chan, D.S.H. Faizhal, B.B. Li, M.-F. Yeo, Y.-C. Trigg, A.D. Agarwal, A. Balasubramanian, N. Pan, J.S. Lim, P.C. Kwong, D.-L.
spellingShingle	Ren, C. Chan, D.S.H. Faizhal, B.B. Li, M.-F. Yeo, Y.-C. Trigg, A.D. Agarwal, A. Balasubramanian, N. Pan, J.S. Lim, P.C. Kwong, D.-L. Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices
author_sort	Ren, C.
title	Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices
title_short	Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices
title_full	Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices
title_fullStr	Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices
title_full_unstemmed	Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices
title_sort	lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for nmos devices
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83882
_version_	1681089517411368960

Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices

Similar Items