Yb-doped Ni FUSI for the n-MOSFETs gate electrode application

10.1109/LED.2006.870252

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Bibliographic Details
Main Authors:	Chen, J.D., Yu, H.Y., Li, M.F., Kwong, D.-L., van Dal, M.J.H., Kittl, J.A., Lauwers, A., Absil, P., Jurczak, M., Biesemans, S.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Band edge workfunction Fully silicided (FUSI) N-MOSFETs Ni/Yb
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57828
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Institution:	National University of Singapore

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Summary:	10.1109/LED.2006.870252

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