Yb-doped Ni FUSI for the n-MOSFETs gate electrode application

10.1109/LED.2006.870252

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Bibliographic Details
Main Authors:	Chen, J.D., Yu, H.Y., Li, M.F., Kwong, D.-L., van Dal, M.J.H., Kittl, J.A., Lauwers, A., Absil, P., Jurczak, M., Biesemans, S.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Band edge workfunction Fully silicided (FUSI) N-MOSFETs Ni/Yb
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57828
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-57828
record_format	dspace
spelling	sg-nus-scholar.10635-578282024-11-13T14:46:59Z Yb-doped Ni FUSI for the n-MOSFETs gate electrode application Chen, J.D. Yu, H.Y. Li, M.F. Kwong, D.-L. van Dal, M.J.H. Kittl, J.A. Lauwers, A. Absil, P. Jurczak, M. Biesemans, S. ELECTRICAL & COMPUTER ENGINEERING Band edge workfunction Fully silicided (FUSI) N-MOSFETs Ni/Yb 10.1109/LED.2006.870252 IEEE Electron Device Letters 27 3 160-162 EDLED 2014-06-17T03:10:39Z 2014-06-17T03:10:39Z 2006-03 Article Chen, J.D., Yu, H.Y., Li, M.F., Kwong, D.-L., van Dal, M.J.H., Kittl, J.A., Lauwers, A., Absil, P., Jurczak, M., Biesemans, S. (2006-03). Yb-doped Ni FUSI for the n-MOSFETs gate electrode application. IEEE Electron Device Letters 27 (3) : 160-162. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.870252 07413106 http://scholarbank.nus.edu.sg/handle/10635/57828 000235846700007 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Band edge workfunction Fully silicided (FUSI) N-MOSFETs Ni/Yb
spellingShingle	Band edge workfunction Fully silicided (FUSI) N-MOSFETs Ni/Yb Chen, J.D. Yu, H.Y. Li, M.F. Kwong, D.-L. van Dal, M.J.H. Kittl, J.A. Lauwers, A. Absil, P. Jurczak, M. Biesemans, S. Yb-doped Ni FUSI for the n-MOSFETs gate electrode application
description	10.1109/LED.2006.870252
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Chen, J.D. Yu, H.Y. Li, M.F. Kwong, D.-L. van Dal, M.J.H. Kittl, J.A. Lauwers, A. Absil, P. Jurczak, M. Biesemans, S.
format	Article
author	Chen, J.D. Yu, H.Y. Li, M.F. Kwong, D.-L. van Dal, M.J.H. Kittl, J.A. Lauwers, A. Absil, P. Jurczak, M. Biesemans, S.
author_sort	Chen, J.D.
title	Yb-doped Ni FUSI for the n-MOSFETs gate electrode application
title_short	Yb-doped Ni FUSI for the n-MOSFETs gate electrode application
title_full	Yb-doped Ni FUSI for the n-MOSFETs gate electrode application
title_fullStr	Yb-doped Ni FUSI for the n-MOSFETs gate electrode application
title_full_unstemmed	Yb-doped Ni FUSI for the n-MOSFETs gate electrode application
title_sort	yb-doped ni fusi for the n-mosfets gate electrode application
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57828
_version_	1821223782268796928

Yb-doped Ni FUSI for the n-MOSFETs gate electrode application

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