Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET
10.1109/LED.2007.896892
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| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83283 |
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| Institution: | National University of Singapore |