Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric
10.1109/LED.2005.859631
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Main Authors: | Joo, M.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83073 |
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Institution: | National University of Singapore |
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