CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixing

CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixing

10.1016/j.sse.2007.09.026

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Bibliographic Details
Main Authors: Ren, C., Chan, D.S.H., Loh, W.Y., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
CMOS
Dual work function
Integration
Intermixing
Metal gate
Online Access:http://scholarbank.nus.edu.sg/handle/10635/114494
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/114494

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