CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixing

CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixing

10.1016/j.sse.2007.09.026

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Bibliographic Details
Main Authors: Ren, C., Chan, D.S.H., Loh, W.Y., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
CMOS
Dual work function
Integration
Intermixing
Metal gate
Online Access:http://scholarbank.nus.edu.sg/handle/10635/114494
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Institution: National University of Singapore
id sg-nus-scholar.10635-114494
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spelling sg-nus-scholar.10635-1144942023-10-25T23:31:43Z CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixing Ren, C. Chan, D.S.H. Loh, W.Y. Lo, G.Q. Balasubramanian, N. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING CMOS Dual work function Integration Intermixing Metal gate 10.1016/j.sse.2007.09.026 Solid-State Electronics 51 11-12 1479-1484 SSELA 2014-12-02T08:05:24Z 2014-12-02T08:05:24Z 2007-11 Article Ren, C., Chan, D.S.H., Loh, W.Y., Lo, G.Q., Balasubramanian, N., Kwong, D.-L. (2007-11). CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixing. Solid-State Electronics 51 (11-12) : 1479-1484. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2007.09.026 00381101 http://scholarbank.nus.edu.sg/handle/10635/114494 000251831200010 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic CMOS
Dual work function
Integration
Intermixing
Metal gate
spellingShingle CMOS
Dual work function
Integration
Intermixing
Metal gate
Ren, C.
Chan, D.S.H.
Loh, W.Y.
Lo, G.Q.
Balasubramanian, N.
Kwong, D.-L.
CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixing
description 10.1016/j.sse.2007.09.026
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Ren, C.
Chan, D.S.H.
Loh, W.Y.
Lo, G.Q.
Balasubramanian, N.
Kwong, D.-L.
format Article
author Ren, C.
Chan, D.S.H.
Loh, W.Y.
Lo, G.Q.
Balasubramanian, N.
Kwong, D.-L.
author_sort Ren, C.
title CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixing
title_short CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixing
title_full CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixing
title_fullStr CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixing
title_full_unstemmed CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixing
title_sort cmos compatible dual metal gate integration with successful vth adjustment on high-k hftaon by high-temperature metal intermixing
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/114494
_version_ 1781789288200929280

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