CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixing

CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixing

10.1109/ESSDER.2006.307661

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Bibliographic Details
Main Authors: Ren, C., Chan, D.S.H., Loh, W.Y., Peng, J.W., Balakumar, S., Jiang, Y., Tung, C.H., Du, A.Y., Lo, G.Q., Kumar, R., Balasubramanian, N., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/114547
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/114547

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